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Semiconductor Doping — 3D Diamond Cubic Lattice

Silicon atom (4 tetrahedral bonds)
Phosphorus donor (5 valence e⁻)
Boron acceptor (3 valence e⁻)
Shared bond electron pair
Free electron (carrier)
Hole (empty bond site)

Pure silicon forms a diamond cubic lattice. Each Si atom forms 4 tetrahedral covalent bonds with its neighbours, sharing a pair of electrons per bond. All valence electrons are locked in bonds at low temperature.

Band Diagram — Pure Silicon

Doping Type

Pure Silicon (Si)
DopantNone
Carrier typeIntrinsic (few)
Atoms0
Bonds0
Free electrons0
Holes0
ConductivityVery Low
Applied voltage0.0 V
Temperature300 K